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| MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. * Blocking Voltage to 800 Volts * On-State Current Rating of 25 Amperes RMS * High Surge Current Capability -- 300 Amperes * Rugged, Economical TO-220AB Package * Glass Passivated Junctions for Reliability and Uniformity * Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design * High Immunity to dv/dt -- 100 V/sec Minimum @ 125C * Device Marking: Logo, Device Type, e.g., MCR25D, Date Code http://onsemi.com SCRs 25 AMPERES RMS 400 thru 800 VOLTS G A K MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR25D MCR25M MCR25N On-State RMS Current (180 Conduction Angles; TC = 80C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Forward Average Gate Power (t = 8.3 ms, TC = 80C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 25 300 A A TO-220AB CASE 221A STYLE 3 1 2 Value Unit Volts 4 3 I2t PGM PG(AV) IGM TJ Tstg 373 20.0 0.5 2.0 - 40 to +125 - 40 to +150 A2sec Watts Watt A C C PIN ASSIGNMENT 1 2 3 4 Cathode Anode Gate Anode ORDERING INFORMATION Device MCR25D MCR25M MCR25N Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 3 Publication Order Number: MCR25/D MCR25D, MCR25M, MCR25N THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 1.5 62.5 260 Unit C/W C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25C TJ = 125C IDRM IRRM mA -- -- -- -- 0.01 2.0 ON CHARACTERISTICS Peak Forward On-State Voltage* (ITM = 50 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Holding Current (VD =12 Vdc, Initiating Current = 200 mA, Gate Open) Latching Current (VD = 12 V, IG = 30 mA) VTM IGT VGT IH IL -- 4.0 0.5 5.0 -- -- 12 0.67 13 35 1.8 30 1.0 40 80 Volts mA Volts mA mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = 67% of Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Critical Rate of Rise of On-State Current (IPK = 50 A, Pw = 30 sec, diG/dt = 1 A/sec, Igt = 50 mA) *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. dv/dt 100 250 -- V/s di/dt -- -- 50 A/s http://onsemi.com 2 MCR25D, MCR25M, MCR25N Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) 40 I GT, GATE TRIGGER CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (V) 35 30 25 20 15 10 5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) Figure 1. Typical Gate Trigger Current versus Junction Temperature Figure 2. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 3 MCR25D, MCR25M, MCR25N I T, INSTANTANEOUS ON-STATE CURRENT (A) R(t) TRANSIENT THERMAL R (NORMALIZED) 100 Typical @ 25C Maximum @ 125C 1 10 Maximum @ 25C Z 0.1 qJC(t) + RqJC @ R(t) 1 0.1 0.5 0.9 1.3 1.7 2.1 2.5 2.9 0.01 0.1 1 10 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical On-State Characteristics 100 t, TIME (ms) 1000 1@10 4 Figure 4. Transient Thermal Response 100 100 I H , HOLDING CURRENT (mA) 10 IL , LATCHING CURRENT (mA) 10 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) 1 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature 130 P(AV), AVERAGE POWER DISSIPATION (WATTS) 32 28 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 20 180 dc TC , CASE TEMPERATURE ( C) 120 a a 110 a = Conduction Angle a = Conduction Angle 60 90 100 dc a = 30 90 80 a = 30 0 60 90 180 20 2 4 6 8 10 12 14 16 18 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 7. Typical RMS Current Derating Figure 8. On State Power Dissipation http://onsemi.com 4 MCR25D, MCR25M, MCR25N 1200 Gate-Cathode Open, (dv/dt does not depend on RGK) STATIC dv/dt (V/us) 2500 Gate Cathode Open, (dv/dt does not depend on RGK ) 2000 1000 STATIC dv/dt (V/us) 800 85C 600 100C 110C 400 TJ = 125C 1500 VPK = 275 1000 VPK = 600 500 VPK = 800 0 VPK = 400 200 0 200 300 400 500 600 700 800 80 85 90 VPK , Peak Voltage (Volts) 95 100 105 110 TJ, Junction Temperature (C ) 115 120 125 Figure 9. Typical Exponential Static dv/dt Versus Peak Voltage. Figure 10. Typical Exponential Static dv/dt Versus Junction Temperature. 300 280 260 240 220 200 TJ=125 C f=60 Hz 180 160 1 2 3 4 5 6 7 NUMBER OF CYCLES 8 9 10 1 CYCLE I TSM, SURGE CURRENT (AMPS) Figure 11. Maximum Non-Repetitive Surge Current http://onsemi.com 5 MCR25D, MCR25M, MCR25N PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE Z -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE http://onsemi.com 6 MCR25D, MCR25M, MCR25N Notes http://onsemi.com 7 MCR25D, MCR25M, MCR25N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 1:00pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 1:00pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5740-2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MCR25/D |
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